cmos inverter造句

• And for analog applications by adding a normally - on nmosfet in series with the n - mosfet in an analog circuit respectively . according to spice3f5 and bert2 . 0 simulation results , the substrate current of new structure cmos inverter is suppressed to about 50 % of its original value and good hot - carriers resistant behaviors are obtained without adding any extra delay
  0对倒相器的模拟结果表明：新型cmos数字电路结构结构使衬底电流降低约50 ，器件的热载流子退化效应明显改善而不会增加电路延迟；巳该电路结构中肖特丛一级管可在nmosfet漏极亘接制作肖特基金半接触来方便地实现，工艺简单又无须增加芯片而积。